High-efficiency QLED structures

ABSTRACT

A light-emitting layer structure that maximizes constructive interference for light emission by varying a phase shift introduced by reflective electrodes. The light-emitting layer structure includes a first and second optical cavity including a first and second reflective electrode; a first and second partially transparent electrode; and a first and second emissive layer (EML) disposed between the first and second reflective electrodes and the first and second partially transparent electrodes, wherein the first EML emits light having a first wavelength; wherein the first reflective electrode introduces a first phase shift, depending on the first wavelength, on reflection of light emitted by the first EML; and wherein the second EML emits light having a second wavelength and the second reflective electrode introduces a second phase shift, depending on the second wavelength, on reflection of light emitted by the second EML, and the first phase shift is different from the second phase shift.

RELATED APPLICATIONS

This application is a continuation-in-part of U.S. application Ser. No.16/517,971, filed on Jul. 22, 2019.

TECHNICAL FIELD

The present invention relates to a layer structure used in emissivedevices, and, particularly, quantum dot (QD) light emitting diodes(QLEDs). QLEDs incorporating the present invention are used in displaysto reduce complexity in the fabrication of the device while minimizingoff-axis color shift and maximizing device efficiency.

BACKGROUND ART

Optical cavities are well known in semiconductor laser fabrication asdescribed in U.S. Pat. No. 7,324,574 (Kim, issued Jan. 29, 2008). Theuse of cavities with organic LEDs (OLEDs) and QLEDs is also known asshown in US 2006/0158098 (Raychaudhuri et al., published Jul. 20, 2006),U.S. Pat. No. 9,583,727 (Cho et al., issued Feb. 28, 2017), and U.S.Pat. No. 8,471,268 (Moon et al., issued Jun. 25, 2013). Raychaudhuri etal. describe a top emitting OLED structure, and Cho et al. and Moon etal. describe QLED structures with light emitting regions betweenreflective areas, one of which is partially transmitting.

Typically, QLED pixels include a red sub-pixel, a green sub-pixel, and ablue sub-pixel. Due to the differing wavelengths of emission of thethree sub-pixels, the cavities must, in general, be different in sizeand shape for the angular emission to be similar enough to minimizeoff-axis color shift. Having different sub-pixel structures increasesdevice complexity and leads to significant costs for fabrication, andoften compromises are made in efficiency to achieve acceptable costs.Methods for reducing the complexity of fabricating sub-pixels ofdifferent sizes include US 2015/0340410 (Hack et al., published Mar. 26,2019), which describes cavities with different optical path lengthswithin multiple sub-pixels.

Other modifications described in the art that improve performance resultin adding complexity to the fabrication of a cavity structure in an LEDby adding additional processing steps such as roughening or patterning.For example, US 2014/0151651 (Jin et al., published Jun. 5, 2014)describes roughening of the top electrode to enhance extraction, andU.S. Pat. No. 8,894,243 (Cho et al., issued Nov. 25, 2014) describespatterning of the base reflecting material. Further modificationsdescribed in the art add complexity by adding additional layers to thedevice. For example, U.S. Pat. No. 9,219,250 (Jeong et al., issued Dec.22, 2015) describes a film with a striped layer with alternate high andlow reflective index, and US 2013/0009925 (Ueda et al., published Jan.10, 2013) describes tilted emissive layers with prism layers outside thecavity. The conventional structures described above are complexadditions to the fundamental cavity structure of the LED.

To address design and manufacturing complexity, hybrid and compositeelectrode solutions have been proposed. For example, U.S. Pat. No.8,378,570 (Yamazaki, issued Feb. 19, 2013) uses dual layers on itsconductor layers with differing metallic concentrations. The first layercomprises a metal and the second layer is generally the same metal withdiffering concentrations of non-metallic materials such as carbon andoxygen. The dual layer conductors are provided to improve chargetransport and to reduce the voltages required to operate a device. US2013/0040516 (Pruneri et al., published Feb. 14, 2013) describes athree-layer top electrode for an OLED device that is designed to reducereflectivity of the top electrode. The center layer is a silver layerand the top and bottom layers are non-metallic layers designed to createan interference structure that minimizes reflection from the topelectrode.

SUMMARY OF INVENTION

There is a need in the art, therefore, for increased efficiency andimproved brightness for light emitting structures while reducing deviceand manufacturing complexity. Embodiments of the present applicationprovide an enhanced arrangement for an emissive display pixel using areflective electrode that causes a specific phase shift with a quantumdot (QD) or organic electroluminescent material in an LED arrangement.This arrangement typically includes multiple sub-pixels, each of whichemits light of a different color or wavelength, and each includes alayer of emissive material disposed between an electron transport layer(ETL) and a hole transport layer (HTL). This sub-pixel stack is thendisposed between two conducting electrode layers, one side of which isdisposed on a substrate and a second conductive layer disposed on theopposite side of the sub-pixel stack to form an optical cavity. At leastone of the conducting layers reflect light emitted by the emissivematerial in the optical cavity. A conducting layer is configured tointroduce a phase shift on reflection that depends on the color, i.e.,wavelength, of the associated sub-pixel. Embodiments of the presentapplication may be implemented in “top-emitting” (TE) structures inwhich the emission is from a side of a device opposite from thesubstrate. Embodiments of the present application also are applicable to“inverted” structures for which the layer sequence issubstrate/cathode/ETL/QD emissive layer/HTL/anode.

Generally, a different structure for an optical cavity is required fordifferent colors of light emission. To maximize constructiveinterference, the round-trip path for light reflected in the opticalcavity should correspond to a phase shift of 2nπ, where n is an integer.The round-trip path for light in the optical cavity is from a topreflector, i.e., a first conducting electrode layer of the twoconducting electrode layers, to the bottom reflector, i.e., a secondconducting electrode layer of the two conducting electrode layers, andback to the top reflector.

To form an LED that maximizes constructive interference, embodiments ofthe present application use a layer structure in which the layerthicknesses of the charge transport layers, the emissive layers, and thereflective electrode layers may be the same for two or more sub-pixels.To emit light that generates the maximum constructive interference inthe cavity, the embodiments of the present application vary theconfiguration of the conducting reflective layer to introduce a phaseshift depending on the color of light, i.e., wavelength, of anassociated sub-pixel. For example, a sub-pixel configured to emit alonger wavelength, e.g., red light, may have a reflective electrode withone or more features to introduce a phase shift. The one or morefeatures include forming a sub-pixel with a different metal from othersub-pixels, forming a sub-pixel with a different multilayer structurefrom other sub-pixels, and forming a sub-pixel with different patternedlayers from other sub-pixels. The multilayer structure may includenon-metallic layers configured to introduce a specific phase shift. Theone or more patterned layers may include a single metal material fordifferent sub-pixels with one or more thin metal layers formed on top ofa first metal layer. The pattern of the one or more patterned layers maycorrespond to a wavelength associated with a specific sub-pixel.

An aspect of the invention is a light-emitting layer structure using areflective electrode that causes a specific phase shift for optimizedlight extraction efficiency depending on a wavelength of emitted light.In exemplary embodiments, the light-emitting structure includes a firstoptical cavity having a first reflective electrode; a first partiallytransparent electrode; and a first emissive layer (EML) disposed betweenthe first reflective electrode and the first partially transparentelectrode that is configured to emit light having a first wavelength.The first reflective electrode is configured to introduce a first phaseshift, depending on the first wavelength, on reflection of light emittedby the first EML. The light-emitting structure further includes a secondoptical cavity having a second reflective electrode; a second partiallytransparent electrode; and a second EML disposed between the secondreflective electrode and the second partially transparent electrode thatis configured to emit light having a second wavelength. The secondreflective electrode is configured to introduce a second phase shift,depending on the second wavelength, on reflection of light emitted bythe second EML, and the first phase shift is different from the secondphase shift.

In exemplary embodiments, each of the first reflecting electrode and thesecond reflecting electrode includes a base layer and at least oneemitting side layer located on an emitting side of the base layer,wherein the at least one emitting side layer has a thickness less than athickness of the base layer, and preferably the at least one emittingside layer has a thickness from 0.5 nm to 12 nm. The at least oneemitting side layer may have a real component of refractive index thatis higher than a real component of refractive index of the base layer.In exemplary embodiments, the at least one emitting side layer includesa first emitting side layer and a second emitting side layer located onan emitting side of the first emitting side layer, wherein a combinedthickness of the first emitting side layer and the second emitting sidelayer is from 0.5 nm to 12 nm. The second emitting side layer may have areal component of refractive index that is higher than a real componentof refractive index of the first emitting side layer, and the firstemitting side layer may have a real component of refractive index thatis higher than a real component of refractive index of the base layer.

To the accomplishment of the foregoing and related ends, the invention,then, comprises the features hereinafter fully described andparticularly pointed out in the claims. The following description andthe annexed drawings set forth in detail certain illustrativeembodiments of the invention. These embodiments are indicative, however,of but a few of the various ways in which the principles of theinvention may be employed. Other objects, advantages and novel featuresof the invention will become apparent from the following detaileddescription of the invention when considered in conjunction with thedrawings.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a drawing depicting an exemplary top emitting light-emittingdevice structure.

FIG. 2 is a drawing depicting an exemplary bottom emittinglight-emitting device structure.

FIG. 3 is a drawing depicting a display pixel including three sub-pixelsin accordance with embodiments of the present invention.

FIG. 4 is a drawing depicting phase shift of the electric fielddistribution in the optical cavity of three sub-pixels in accordancewith embodiments of the present invention.

FIGS. 5A, 5B, and 5C are drawings depicting the effect of differentelectrode materials on the phase shift in a sub-pixel in accordance withembodiments of the present invention.

FIG. 6 is a drawing depicting three multilayer reflective electrodes inaccordance with embodiments of the present invention.

FIG. 7 is a drawing depicting three thin-layer reflective electrodes inaccordance with embodiments of the present invention.

FIG. 8 is a drawing depicting three patterned reflective electrodes inaccordance with embodiments of the present invention.

FIGS. 9A, 9B, and 9C are drawings depicting constructive interference insub-pixels in accordance with embodiments of the present invention.

DESCRIPTION OF EMBODIMENTS

Embodiments of the present invention will now be described withreference to the drawings, wherein like reference numerals are used torefer to like elements throughout. It will be understood that thefigures are not necessarily to scale.

FIG. 1 is a drawing depicting an exemplary top emitting (TE)light-emitting device structure 10. The TE structure 10 emits light 1through a top conducting layer, a top electrode 2, that is a partialreflector formed opposite from a substrate 4. The substrate 4 may be aglass substrate on which a bottom conducting layer, a bottom electrode6, is formed. The thickness of the bottom electrode 6 may be greaterthan 80 nm. The bottom electrode 6 may be a metallic material configuredto reflect light to enhance emission through the top electrode 2. Thebottom electrode 6 is typically aluminum, silver, Indium Tin Oxide(ITO), and the like or a combination thereof. The bottom electrode 6 maybe connected to a voltage source for applying different voltages to thefirst electrode in different sub-pixels, for example a thin filmtransistor (TFT) backplane.

A hole transport layer (HTL) 8 may be formed on the bottom electrode 6.The HTL 8 may include two layers, a first HTL sub-layer 8 a formed usinga material such as PEDOT:PSS (poly(3,4-ethylenedioxythiophene)polystyrene sulfonate), and a second HTL sub-layer 8 b formed using amaterial characterized by a high hole mobility such as TFB[poly(9,9′-dioctylfluorene-co-bis-N,N′-(4-butylphenyl)diphenylamine)].An emissive layer (EML) 12 may be formed on the HTL 8. The EML 12 mayinclude nanoparticles such as quantum dots, organic light emittingmaterials, and the like. An electron transport layer (ETL) 14 may beformed on the EML 12. The ETL 14 may be formed using a materialcharacterized by high electron mobility such as nanoparticle Zinc Oxide.

The top electrode 2 is a thin metal layer such as silver,magnesium-silver alloy, and the like. The top electrode 2 may be thickenough to carry sufficient current but thin enough to be sufficientlytransparent for adequate light emission. The top electrode 2 may be lessthan 30 nm thick, and may be approximately 10 nm to 15 nm thick. In a TElight-emitting structure 10, light emission is through the partiallyreflective top electrode 2. FIG. 1 also shows an xyz-coordinate system 3that is applicable throughout the description in connection withsubsequent figures.

The configuration of FIG. 1 may be referred to in the art as a “normalstructure”, with the bottom electrode 6 closest to the substrateconstituting the anode, and the top electrode 2 farthest from thesubstrate constituting the cathode. An alternative configuration isreferred to in the art as an “inverted structure”, in which the bottomelectrode 6 closest to substrate constitutes the cathode and theelectrode layer 2 farthest from the substrate constitutes the anode. Inan inverted structure, the charge transport layer 8 is the ETL and thecharge transport layer 14 is HTL. Accordingly, the ETL and HTL may bereferred to herein generally as charge transport layers (CTL) asappropriate.

Embodiments of the present application can be applied to both OLED(organic light emitting material) and QLED (light emitting quantum dots)for the EML 12. However, embodiments of the present application undercertain circumstances may be better suited for QLED over OLED devicesbecause of the inherent narrow line width of the emission and theresulting specific phase shift on the lower material.

FIG. 2 is a drawing depicting an exemplary bottom emitting (BE)light-emitting device structure 20. The BE structure 20 emits light 1through a bottom electrode 22 and a transparent substrate 24. The BEstructure 20 includes an HTL 26, an emissive layer (EML) 28, and an ETL30 that are similar to or composed comparably as the layers formed inthe TE structure 10. The BE structure 20 includes a top electrode 32that may be a thick opaque metal, such as silver or aluminum, configuredto reflect light emitted from the emissive layer to enhance emissionthrough the bottom electrode 22. The bottom electrode 22 may be apartial reflector such as Indium Tin Oxide (ITO), indium doped zincoxide (IZO), fluorine doped tin oxide (FTO), or particles of silver(e.g. nanoparticles, nanowires). The use of a partial reflector such asITO that is substantially more transmissive than thin metal layersfacilitates the fabrication of thicker electrodes to serve as the bottomelectrode 22. The example of FIG. 2 also is depicted as a normalstructure, although a BE device also may be configured as an invertedstructure as described above with respect to FIG. 1.

Embodiments of the present application can apply equally to top andbottom emitting structures that incorporate a reflective electrode thatintroduces a phase shift. The following description generally is inconnection with top emitting structures, but embodiments of the presentapplication described herein may also be used in bottom emittingstructures.

FIG. 3 is a drawing depicting a display pixel including three sub-pixelsin accordance with embodiments of the present application. A displaypixel may include two or more sub-pixels each of which emits light of adifferent color, i.e., wavelength. An exemplary top-emission displaypixel 33 includes three sub-pixels including a red sub-pixel 34R, agreen sub-pixel 34G, and a blue sub-pixel 34B. The display pixel 33 mayemit white light when all three sub-pixels are emitting light. Athickness 16 of the sub-pixels is on the order of 100-200 nm. Thedisplay pixel 33 has layers that are comparable as in the conventionalconfigurations of FIGS. 1 and 2, and thus like layers are identifiedwith like reference numerals, and with designations “R”, “G”, and “B”corresponding respectively to the red, green, and blue sub-pixels.

An optical cavity 35 is formed by a first metallic reflector, i.e., thetop electrode 2 and a second metallic reflector, i.e., the bottomelectrode 61 in each sub-pixel. For a ‘top-emitting’ device, the primarylight emission is through the top electrode 2 of the optical cavity 35,and the bottom electrode 61 is an optically reflective layer for lightemitted by each sub-pixel. The bottom electrode 61 may be a metallicmaterial such as one or more of silver, aluminum, titanium and the like.For a ‘top-emitting’ device, the top electrode 2 is configured to have ahigh optical transmission for light emitted by each sub-pixel. The topelectrode 2 may be a conductive layer that is thick enough to havesufficiently low electrical resistance so that it can carry sufficientelectrical current without a large voltage drop, but thin enough to bepartially transparent to the light emitted by the device. In alternativeembodiments, the top electrode 2 may include a conductive material withhigh optical transmissivity such as indium doped tin oxide (ITO), indiumdoped zinc oxide (IZO), fluorine doped tin oxide (FTO), particles ofsilver (e.g. nanoparticles, nanowires).

The optical cavity 35 provides an arrangement that reflects lightemitted from the emissive layer 12 back and forth between the electrodesto cause interference with light in the optical cavity 35. At particularangles, the interference is constructive. When the interference isconstructive, the round-trip top reflector to top reflector pathway thatlight travels is 2nπ, with n being an integer and is referred to as the“mode” of the cavity. Constructive interference, and therefore lightemission, is strong in optical cavities formed to reflect light at 2nπ.Preferably, a proper cavity is designed so that this constructivecondition is met with light approximately on axis, normal to the topelectrode plane. In this case the display is brightest on axis and theefficiency is maximal. Several elements contribute to the phase shift inthe optical cavity 35. The thicknesses and refractive indices of thelayers between the top electrode 2 and the bottom electrode 61 controlthe phase shift of light in the optical cavity 35. Additionally,reflection at each of the top electrode 2 and the bottom electrode 61can contribute a significant phase shift, especially for metallicelectrodes. This phase shift is dependent on the electrode material andthe material next to the electrode to which the light is incident. Thetop electrode 2 and/or the bottom electrode 61, along with the adjacentCTL, may be configured to control the phase shift on reflection suchthat one or more layers of the device can be the same for multiple subpixels, and thus fabrication issues are mitigated and performance can beimproved.

Conventional design processes add additional layers or alter thethickness of layers in the cavity so that the constructive interferencehappens for light propagating normal to the layers. As the interferenceis highly wavelength dependent, conventional approaches use a differentstructure for each sub-pixel of different color light emission to meetthese criteria. Thus, different layer thicknesses conventionally arerequired for red, green and blue wavelengths, which may be difficult toindividually fabricate, as fabrication requires a patterning techniquewith multiple stages. The present application describes structures andmethods that facilitate QLED structures patterned with layers of equalor substantially similar thickness between sub-pixels, to reducecomplexity and the number of stages as compared to conventionalconfigurations.

In particular, embodiments of the present application provide astructure in which the thickness of the top electrode 2, the bottomelectrode 61, the ETL 14, the EML 12, and the HTL 8 are substantiallythe same thickness in each sub-pixel of different wavelength emission.To form a sub-pixel with an optical cavity 35 that maximizes theemission of the respective wavelength, the top electrode 2, the bottomelectrode 61, or a combination thereof are different for at least two ofthe sub-pixels. To optimize the path that the emitted light travels inthe optical cavity 35, the bottom electrode 61 in each sub-pixel is madewith a different metallic material. For example, the bottom electrode ofthe red sub-pixel 61R may comprise a first metal material, the bottomelectrode of the green sub-pixel 61G may comprise a second metalmaterial, and the bottom electrode of the blue sub-pixel 61B maycomprise a third metal material. The bottom electrode 61 for eachsub-pixel is configured to cause a sub-pixel specific phase shift. Thephase shift is configured based on the color of emitted light associatedwith the sub-pixel. Each metallic layer has a different phase shiftcompared to the metallic layers in sub-pixels associated with adifferent wavelength. The metallic layers can be chosen so that theassociated phase shift causes a total round-trip phase shift of 2nπ. Thedevice layers (electrodes, EML, ETL, HTL) are substantially similar orthe same thickness. The emissive layers may be a different materialbetween the sub-pixels but have similar thicknesses.

For example, the red sub-pixel 34R has an EML 12R with a first emissivematerial, the green sub-pixel 34G has an EML 12G with a second emissivematerial, and the blue sub-pixel 34B has an EML 12B with a thirdemissive material. Each EML 12 is configured to emit light associatedwith a specific wavelength.

FIG. 4 is a drawing depicting phase shift of the electric fielddistribution in the optical cavity of three sub-pixels in accordancewith embodiments of the present application. An electrical fielddistribution 40R associated with the red sub-pixel 34R is shown in FIG.4. The bottom electrode 61R is configured to introduce an effectivephase shift on reflection 41R. The optical cavity 35 thickness may notbe precisely nλ/2 for red light, so a phase shift is applied to enhancethe emission efficiency. The effective phase shift on reflection 41R isapplied to the electrical field distribution 40R on reflection and astanding wave pattern of one wavelength for red light is excited for asecond order mode, n=2.

An electrical field distribution 40G associated with the green sub-pixel34G also is shown in FIG. 4. The bottom electrode 61G is formed using adifferent material from the bottom electrode 61R and is configured tointroduce the effective phase shift on reflection 41G. The opticalcavity 35 thickness may not be precisely nλ/2 for green light, so againa phase shift is applied to enhance the emission efficiency. Theeffective phase shift on reflection 41G is applied to the electricalfield distribution 40G on reflection and a standing wave pattern ofapproximately one wavelength for green light is excited for a secondorder mode, n=2.

An electrical field distribution 40B associated with the blue sub-pixel34G also is shown in FIG. 4. The bottom electrode 61B is formed using adifferent material than the bottom electrode 61R and is configured tointroduce the effective phase shift on reflection 41B. The bottomelectrode 61B may be the same material or a different material as thebottom electrode 61G. The optical cavity 35 thickness may not beprecisely nλ/2 for blue light, so again a phase shift is applied toenhance the emission efficiency. The effective phase shift on reflection41B is applied to the electrical field distribution 40B on reflectionand a standing wave pattern of approximately 3λ/2 wavelengths for bluelight is excited for a third order mode, n=3.

The electrical field distribution 40R corresponds to red light and isassociated with a longer wavelength than the electrical fielddistribution 40G corresponding to green light and the electrical fielddistribution 40B corresponding to blue light. Accordingly, to enableequal or substantially similar layer thicknesses for the individuallayers, the bottom electrode 61R is configured for a greater phase shifton reflection 41R for the longer red wavelength as compared to the greenand blue wavelengths 41G and 41B. The overall result of the respectivephase shifting is to maximize output efficiency for each color, whilepermitting commonality of certain layer thicknesses, such as for examplethe CTLs, to reduce complexity of the combined pixel structure. Inexemplary embodiments, certain layers, such as for example one or moreof the CTLs and/or the other electrode (top electrode 2 in thisexample), may be shared among sub-pixels for an optimal reduction ofcomplexity.

Suitable materials for the bottom electrode 61 to form a base reflectorinclude silver, aluminum, chromium, tin, titanium, palladium, gallium,and the like.

These metals may be deposited by thermal evaporation. Highermelting-point metals, such as platinum, tungsten, tantalum, zirconium,and the like may also be used and may be deposited by electron-beamevaporation. The material for the bottom electrode may includenon-metallic materials such as ITO. Such non-metallic materials areconducting and may be selected to introduce a different phase shift toreflection than metal materials. Alternative materials such asinterference film layers may also be integrated to provide a differentphase shift between two sub-pixels. In alternative embodiments, gold andcopper may be used and have different responses depending on thewavelength. For example, for blue wavelengths, gold as a differentresponse than red and green wavelengths. For red wavelengths, copper hasa different response than green and blue wavelengths. Thesecharacteristics may be beneficial depending on the specific application.One of ordinary skill in the art would recognize many variations,modifications, and alternatives.

Embodiments of the present application can also be used for a bottomemitting structure where all the features described can be applied tothe underside of the top electrode 2 in a bottom emitter.

The embodiments here can also be applied to the case when the topelectrode 2 in a top emitting structure 10 is relatively transparent,for example in the case of ITO where the reflectivity is <5-10%. In thiscase the distance between the source and the base reflector 6 is stillimportant, as the reflection can interfere with the upward emittedlight. The choice of material (and layers) between the reflector andsource (layer 8) still need to be correctly chosen and the applicationof extra metal layer to shift phase can be applied in this case as well.

FIGS. 5A, 5B, and 5C are drawings depicting the effect of differentelectrode materials on the phase shift in a sub-pixel in accordance withembodiments of the present application. FIG. 5A illustrates a plot ofextraction efficiency versus ETL thickness for a red sub-pixel withdifferent electrode materials. A first trace 53R shows the extractionefficiency of an aluminum electrode versus the thickness of the ETLlayer. A second trace 54R shows the extraction efficiency of a silverelectrode versus the thickness of the ETL layer. A peak shift 55R isdefined by the change in thickness between a first peak extractionefficiency 56R associated with the first trace 53R and a second peakextraction efficiency 57R associated with the second trace 54R. The peakshift is due to the different material for the reflector causing adifferent phase shift on reflection of light incident on thecorresponding electrode.

FIG. 5B illustrates a plot of extraction efficiency versus ETL thicknessfor a green sub-pixel with different electrode materials. A first trace53G shows the extraction efficiency of an aluminum electrode versus thethickness of the ETL layer. A second trace 54G shows the extractionefficiency of a silver electrode versus the thickness of the ETL layer.A peak shift 55G is defined by the change in thickness between a firstpeak extraction efficiency 56G associated with the first trace 53G and asecond peak extraction efficiency 57G associated with the second trace54G. The peak shift is due to the different material for the reflectorcausing a different phase shift on reflection of light incident on thecorresponding electrode.

FIG. 5C illustrates a plot of extraction efficiency versus ETL thicknessfor a blue sub-pixel with different electrode materials. A first trace53B shows the extraction efficiency of an aluminum electrode versus thethickness of the ETL layer. A second trace 54B shows the extractionefficiency of a silver electrode versus the thickness of the ETL layer.A peak shift 55B is defined by the change in thickness between a firstpeak extraction efficiency 56B associated with the first trace 53B and asecond peak extraction efficiency 57B associated with the second trace54B. The peak shift is due to the different material for the reflectorcausing a different phase shift on reflection of light incident on thecorresponding electrode.

FIG. 6 is a drawing depicting three multilayer reflective electrodes inaccordance with embodiments of the present application. As to eachsub-pixel, an overall structural view is shown, along with a close-upview of the bottom electrode layer as indicated by the oval indicatorsin the figure. FIG. 6 includes a top-emitting red sub-pixel 60R with ared multilayer bottom electrode 62R, a top-emitting green sub-pixel 60Gwith a green multilayer bottom electrode 62G, and a top-emitting bluesub-pixel with a blue multilayer bottom electrode 62B. The sub-pixels inFIG. 6 have certain layers that are comparable as in the conventionalconfigurations of FIGS. 1 and 2 and the embodiment of FIG. 3, and thuslike layers are identified with like reference numerals.

The bottom electrode 62 may be a metal reflector comprising a compositestructure including multiple metal and non-metal layers that aredifferent for each sub-pixel. The composite structure provides morecontrol on the actual phase shift than relying on single metal sub-pixelcombinations. The red multilayer bottom electrode 62R may include a baselayer 63R, a first top layer 64R and a second top layer 65R. The redmultilayer bottom electrode 62R may be configured to introduce aneffective phase shift on reflection corresponding to a wavelengthassociated with red light. The green multilayer bottom electrode 62G mayinclude a base layer 63G, a first top layer 64G and a second top layer65G. The green multilayer bottom electrode 62G may be configured tointroduce an effective phase shift on reflection corresponding to awavelength associated with green light. The blue multilayer bottomelectrode 62B may include a base layer 63B, a first top layer 64B and asecond top layer 65B. The blue multilayer bottom electrode 62B may beconfigured to introduce an effective phase shift on reflectioncorresponding to a wavelength associated with blue light.

The multiple top layers, for example the first top layer 64 and thesecond top layer 65, may impact the electron/hole transport into theadjacent transport layers such as HTL 8. This transport is governed by ametal work function and it is desirable that a particular work functionis used for optimum charge carrier transport. To improve theelectron/hole transport into the adjacent transport layers, a very thinsingle additional layer of a metal can be used between the bottomelectrode and the HTL 8. Suitable materials for use as the multiplelayers include any of the materials listed as suitable for the singlelayer reflector, with the layer materials being selected for optimizedphase shift associated with each color sub-pixel.

FIG. 7 is a drawing depicting three thin-layer reflective electrodes inaccordance with embodiments of the present application. As to eachsub-pixel, an overall structural view is shown, along with a close-upview of the bottom electrode layer as indicated by the oval indicatorsin the figure. FIG. 7 includes a top-emitting red sub-pixel 70R with ared thin-layer bottom electrode 72R, a top-emitting green sub-pixel 70Gwith a green thin-layer bottom electrode 72G, and a top-emitting bluesub-pixel 70B with a blue thin-layer bottom electrode 72B. Thesub-pixels in FIG. 7 have certain layers that are comparable as in theconventional configurations of FIGS. 1 and 2 and the embodiment of FIG.3, and thus like layers are identified with like reference numerals. Anadditional layer 76 of a metal deposited on a base electrode layer 74facilitates transport of charge carriers across the metal boundary 78 sothe effective work function is that of the base metal. The top-emittingred sub-pixel 70R includes a first thin layer 76R, the top-emittinggreen sub-pixel 70G includes a second thin layer 76G, and thetop-emitting blue sub-pixel 70B includes a third thin layer 76B. Theadditional layer 76 introduces an additional optical phase shift that iscontrollable by the selection of material and the thickness of thelayer.

Suitable materials for use as a thin layer include any of the materialslisted as suitable for the single layer or multiple reflector withsilver and/or aluminum as the preferred materials. Gold and/or coppermay be used in alternative embodiments. Gold and/or copper introduceadditional color effects on light emitted from the corresponding pixel.A gold thin layer may be used to form a thin layer in a red sub-pixel ora green sub-pixel. Copper may be used to form a thin layer in a redsub-pixel. Titanium and chromium may be particularly suitable due totheir good wettability facilitating the deposition of very thin layers.The thickness of these thin layers may be from 0.5 nm to 12 nm.

Referring more specifically to the multilayer reflective electrodeconfigurations of FIGS. 6 and 7, the following provides a basis foroptimizing the additional emitting side thin layers to have thicknessesless than or equal to about 12 nm. As referenced above, in thethree-layer embodiment of FIG. 6, each of the reflective electrodes 62R,62G, and 62B has a base layer 63R, 63G, and 63B. In addition, each ofthe set of combined emitting side thin layers 64R/65R, 64G/65G, and64B/65B for each of the R, G, and B pixel structures has a combinedthickness of less than or equal to 12 nm (more particularly from 0.5 nmto 12 nm). In the two-layer embodiment of FIG. 7, each of the reflectiveelectrodes 72R, 72G, and 72B has a base layer 74R, 74G, and 74B. Inaddition, each of the emitting side thin layers 76R, 76G, and 76B foreach of the R, G, and B pixel structures has a thickness of less than orequal to 12 nm (again more particularly from 0.5 nm to 12 nm). Each ofthe base layers for each of the R, G, and B pixel structures, baselayers 63R/G/B in FIG. 6 and base layers 72R/G/B in FIG. 7, as isconventional, has a thickness of about 80-100 nm, and thus generally acombined thickness of the one or more emitting side layers is less thana thickness of the corresponding base layers.

In addition, a real component of the refractive index of the multiplelayers increases layer by layer in the direction toward the emittingside or top electrode 2. In other words, in the three-layerconfiguration of FIG. 6, for each of R, G, and B pixel structures, thereal component of refractive index (RRI) is highest for second emittingside layers 65R/G/B, intermediate for first emitting side layers64R/G/B, and lowest for base layers 63R/G/B, i.e., RRI layer 63<RRIlayer 64<RRI layer 65 in each R, G, and B pixel structure. In thetwo-layer configuration of FIG. 7, for each of R, G, and B pixelstructures, the real component of refractive index (RRI) is higher foremitting side layers 76R/G/B than for base layers 74R/G/B, i.e., RRIlayer 74<RRI layer 76 in each R, G, and B pixel structure.

Again, the combined additional first and second emitting side layers 64and 65 in each pixel structure in FIG. 6, and each of the additionalemitting side layers 76 in each pixel structure of FIG. 7, have athickness of 0.5 nm to 12 nm. This optimal range of thickness is relatedto the evanescent field created by the incident light. As is known inthe art, the electric field of a one-dimensional light ray propagates ina dielectric of reflective index n with the wave equation:exp(iωt−inkx)  (1)where x is the position, t is time, ω is the angular frequency, andk=2π/λ is the wavenumber, λ being the wavelength of the wave. ωλ/2π=thespeed of the wave in the dielectric=c/n, and c is the speed of light ina vacuum.

Propagation of light in a metal is very different, though the sameequation generally applies. In this case the metal refractive index iscomplex, n=n_(R)−iκ, where n_(R) is the real component and κ is known asthe extinction coefficient. The wave equation for propagation becomesnow:exp(iωt−in _(R) kx)exp(−κkx)  (2)For most metals, κ>>n_(R), which means that the propagation in x is anexponentially reducing function, over a 1/e mean distance of 1/kκ=λ/2πκ.The exponentially dying light is called an evanescent wave.

When light in a dielectric with real refractive index n is incident on ametal of reflective index n_(M)=n_(R)−iκ, the reflectivity can becalculated using Fresnel reflection theory (the * refers to the complexconjugate):R=((n−n _(M))/(n+n _(M)))((n−n _(M))/(n+n _(M)))*  (3)Because the index n_(M) is largely imaginary, a majority of the light isreflected. However, because the metal has a small real component to therefractive index, R<1, some energy is propagated into the metal as anevanescent wave that exponentially dies according to equation (2) above.Usually this light is simply absorbed.

The phase shift ϕ of this reflected light is readily calculated fromFresnel theory and can be stated as:Tan ϕ=2κn/(n ² −n _(R) ²−κ²)  (4)When an emitting side metal layer is sufficiently thin and there isanother metal base layer underneath it relative to the emitting side,the evanescent wave is not fully absorbed and there will be a reflectionof the evanescent wave such that the evanescent wave will propagate backthrough the metal emitting side layer to the dielectric. When theevanescent wave reaches the dielectric, the evanescent wave canpropagate as a non-evanescent wave according to equation (1), and thusthe evanescent wave will interfere with the main reflected wave due tothe propagated phase shift. This will alter the phase of the resultingreflection.

Accordingly, when the additional emitting side layer (or layers) doesnot exist, the phase shift will be determined solely by the base metallayer. When the additional emitting side layer (or layers) is added andis sufficiently thin, i.e. half the 1/e mean propagation distance of theevanescent wave in the emitting side layer=λ/4πκ, then the phase shiftwill be determined by the additional emitting side metal layerinterfering with its own evanescent wave reflected by the base metallayer, which is dependent on the base metal refractive index. Thus, anintermediate state between the two metal phase shifts can be obtained,and the parameters can be set to provide constructive interference asdescribed above.

Looking to specific material examples, for aluminium κ≈7, giving anemitting side layer thickness at 620 nm wavelength of <7 nm. For silver,so this emitting side layer thickness is about 12 nm. These thicknessvalues are dependent on the wavelength to be emitted by a given pixel,so will vary with red versus green versus blue emissive layers. Thus,the emitting side metal layer thickness, which is the thickness ofcombined layers 64 and 65 in FIG. 6 and the thickness of layers 76 inFIG. 7, should be less than these values to have a substantial effect onthe phase shift to provide constructive interference. More generally,therefore, as referenced above thicknesses 0.5 nm to 12 nm are suitabledepending on the wavelength of light (R, G, or B) to be emitted by agiven pixel or light-emitting structure.

In addition, as referenced above it is desirable that the layer closestto the top electrode, i.e., the emitting side layer, should be the metallayer with the highest real component of the refractive index. Thismeans more energy can be transmitted to the evanescent field in themetal to implement the phase shift. Thus, for a silver/aluminiumcombination, silver has an n_(R)≈0.1 and aluminium n_(R)≈1. Accordingly,the silver material should form the base layer and the aluminium layershould form the one or more emitting side thin layers. Accordingly, in atwo-layer configuration such as depicted in FIG. 7, the emitting sidelayer has a real component of refractive index that is higher than areal component of refractive index of the base layer. In a three-layerconfiguration such as depicted in FIG. 6, the second (uppermost orclosest to electrode 2) emitting side layer has a real component ofrefractive index that is higher than a real component of refractiveindex of the first (lower or farther from electrode 2) emitting sidelayer, and the first emitting side layer has a real component ofrefractive index that is higher than a real component of refractiveindex of the base layer.

FIG. 8 is a drawing depicting two patterned reflective electrodes inaccordance with embodiments of the present application. As to eachsub-pixel, an overall structural view is shown, along with a close-upview of the bottom electrode layer as indicated by the oval indicatorsin the figure. FIG. 8 includes a top-emitting red sub-pixel 80R with ared patterned bottom electrode 82R, a top-emitting green sub-pixel 80Gwith a green patterned bottom electrode 82G, and a top-emitting bluesub-pixel 80B with a blue patterned bottom electrode 82B. The sub-pixelsin FIG. 8 have certain layers that are comparable as in the conventionalconfigurations of FIGS. 1 and 2 and the embodiment of FIG. 3, and thuslike layers are identified with like reference numerals. The patternedelectrodes described in FIG. 8 may be used in combination with any ofthe embodiments described herein.

The patterned bottom electrode 82 may include an additional metal layer84 that can be patterned in two dimensions, either with apertures 86 orwith other types of three dimensional structures formed on the metallayer 84. The structure may be different for each sub-pixel to introducedifferent, controllable phase shifts to the reflected light. An aperturearray may be configured with apertures of radial or length dimension 87and separation distance 88 that are significantly smaller than thewavelength of light associated with the corresponding sub-pixel so thatthe apertures provide a reduced mean refractive index between thereflector and the transport layer and thus provide a different phaseshift on reflection. The length dimension 87 of the apertures 86 issignificantly smaller than the cavity size and larger than the thicknessof the layer. The separation distance 88 between apertures may varybetween apertures 86 to form a random array.

In an exemplary embodiment, the apertures 86 may be approximatelycircular. The apertures 86 in the structure can be formed by electronbeam etching or by an evaporative mask process. The density of theapertures 86 may vary between the different sub-pixels to afford adifferent phase shift. For example, the red patterned bottom electrode82R includes a first number of apertures per unit area at a first sizeand a first separation, the green patterned bottom electrode 82Gincludes a second number of apertures per unit area at a second size anda second separation, and the blue patterned bottom electrode 82Bincludes a third number of apertures per unit area at a third size and athird separation, which may be different for sub-pixels of differentcolors. The number of apertures per unit area, the size, and theseparation may be equal between two or more sub-pixels. Apertures 86 maybe added to a single metal base reflector layer by using this process.In this case it is also possible to vary the depth in addition to, orinstead of, the aperture density.

While embodiments described herein largely have been described using atop emitting “normal structure”, one of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives in whichembodiments of the present application may be used, includingapplication of comparable principles to inverted and/or bottom emittingstructures.

In an exemplary embodiment, the present invention may be combined withan EML of varying thickness as shown in FIGS. 9A, 9B, and 9C. Additionaldescription related to EMLs of varying thickness is provided in U.S.patent application Ser. No. 16/446,677, filed on Jun. 20, 2019, thedisclosure of which is hereby incorporated by reference in its entiretyfor all purposes.

FIGS. 9A, 9B, and 9C are drawings depicting constructive interference insub-pixels in accordance with embodiments of the present invention. Thethree sub-pixels in FIGS. 9A, 9B, and 9C use a bottom reflector 90, anHTL 92, an EML 94, an ETL 96, and a top electrode 98. The bottomreflector 90 may be silver. The HTL 92 may be a PEDOT:PSS and TFB chargetransport layer. The ETL 96 may be a ZnO nanoparticle charge transportlayer. The top electrode 98 may be formed with a silver/magnesiummaterial. The layer thickness and emission locations are chosen so thatthe best optical mode is excited by aligning a maximum 100 of the modewith an emission height 102. Generally, the layer thicknesses andemission location are chosen primarily to align the blue sub-pixel 104Bwith one of its maxima, as the blue sub-pixel has the lowest overallefficiency compared to the red sub-pixel 104R and the green sub-pixel104G.

FIG. 9A shows the alignment of the maximum 100B of the blue sub-pixel104B. A thickness of the EML 106B and a thickness of the HTL 108B may bechosen to shift the emission height 102B in the cavity 35 of the bluesub-pixel 104B. The adjusted thicknesses move align the maximum 100B toeliminate the mode maximum misalignment 110B. The thickness of the HTL108B will remain the same in both the red sub-pixel 104R and the greensub-pixel 104G.

Accordingly, the sub-pixels are not aligned with their respective maximaand one or more embodiments described herein may be incorporated tointroduce a phase shift.

FIG. 9B shows the alignment of the maximum 100R of the red sub-pixel104R using a second reflector 112R. A first red sub-pixel 104R is shownwithout the second reflector 112R and a second red sub-pixel 104R withthe second reflector 112R to introduce a phase shift to introduce aphase shift 114 to eliminate the mode maximum misalignment 110R. Thesecond reflector 92R may be a thin (3-5 nm) aluminum layer. The aluminumlayer is configured to retard the phase on reflection relative to silverand a thicker cavity 35 to accommodate the phase change is provided byvarying the thickness 108R of the HTL 92R.

FIG. 9C shows the alignment of the maximum 100G of the green sub-pixel104G using a thickness of the EML 106G and a thickness of the HTL 108Gto shift the emission height 102G in the cavity 35. Adjusting thethicknesses moves the emission height 102G and reduces the mode maximummisalignment 110G. The arrangement of the blue sub-pixel 104B, the redsub-pixel 104R, and the green sub-pixel 104G better aligns the maxima ofthe mode with the emission heights in order to give a higher extractionefficiency for all three sub pixels.

While embodiments described herein largely have been described using atop emitting “normal structure”, one of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives in which thepresent invention may be used, including application of comparableprinciples to inverted and/or bottom emitting structures.

An aspect of the invention therefore is a light-emitting layer structurethat maximizes constructive interference for light emission by varying aphase shift introduced by reflective electrodes. In exemplaryembodiments, the light emitting layer structure includes a first opticalcavity including a first reflective electrode; a first partiallytransparent electrode; and a first emissive layer (EML) disposed betweenthe first reflective electrode and the partially transparent electrode,wherein the first EML is configured to emit light having a firstwavelength; wherein the first reflective electrode is configured tointroduce a first phase shift, depending on the first wavelength, onreflection of light emitted by the first EML; and a second opticalcavity including a second reflective electrode; a second partiallytransparent electrode; and a second EML disposed between the secondreflective electrode and the second partially transparent electrode,wherein the second EML is configured to emit light having a secondwavelength; wherein the second reflective electrode is configured tointroduce a second phase shift, depending on the second wavelength, onreflection of light emitted by the second EML, and the first phase shiftis different from the second phase shift. Each of the first reflectingelectrode and the second reflecting electrode comprises a base layer andat least one emitting side layer located on an emitting side of the baselayer, wherein the at least one emitting side layer has a thickness lessthan a thickness of the base layer. The light-emitting layer structuremay include one or more of the following features, either individuallyor in combination.

In an exemplary embodiment of the light emitting layer structure, the atleast one emitting side layer has a thickness from 0.5 nm to 12 nm.

In an exemplary embodiment of the light emitting layer structure, the atleast one emitting side layer has a real component of refractive indexthat is higher than a real component of refractive index of the baselayer.

In an exemplary embodiment of the light emitting layer structure, the atleast one emitting side layer includes aluminum and the base layerincludes silver.

In an exemplary embodiment of the light emitting layer structure, the atleast one emitting side layer comprises a first emitting side layer anda second emitting side layer located on an emitting side of the firstemitting side layer, wherein a combined thickness of the first emittingside layer and the second emitting side layer is less than the thicknessof the base layer.

In an exemplary embodiment of the light emitting layer structure, thecombined thickness of the first emitting side layer and the secondemitting side layer is from 0.5 nm to 12 nm.

In an exemplary embodiment of the light emitting layer structure, thesecond emitting side layer has a real component of refractive index thatis higher than a real component of refractive index of the firstemitting side layer, and the first emitting side layer has a realcomponent of refractive index that is higher than a real component ofrefractive index of the base layer.

In an exemplary embodiment of the light emitting layer structure, thebase layer has a thickness of 80-100 nm.

In an exemplary embodiment of the light emitting layer structure, thefirst phase shift is configured to cause light having the firstwavelength to propagate in the first optical cavity at a first mode andthe second phase shift is configured to cause light having the secondwavelength to propagate in the second optical cavity at a second mode.

In an exemplary embodiment of the light emitting layer structure, thefirst reflective electrode comprises a first material for introducingthe first phase shift and the second reflective electrode comprises asecond material for introducing the second phase shift.

In an exemplary embodiment of the light emitting layer structure, thefirst material includes at least one of silver, aluminum, chromium, tin,titanium, palladium, gallium, platinum, tungsten, tantalum, zirconium, aconductive non-metallic material, and an interference film layer.

In an exemplary embodiment of the light emitting layer structure, thefirst reflective electrode includes a first plurality of layers and thesecond reflective electrode comprises a second plurality of layers.

In an exemplary embodiment of the light emitting layer structure, thefirst plurality of layers and the second plurality of layers have arespective first top layer and second top layer with a thickness between0.5 nm and 30 nm.

In an exemplary embodiment of the light emitting layer structure, eachlayer of the first plurality of layers and each layer of the secondplurality of layers comprises at least one of silver, aluminum,chromium, tin, titanium, palladium, gallium, platinum, tungsten,tantalum, zirconium, a conductive non-metallic material, and aninterference film layer.

In an exemplary embodiment of the light emitting layer structure, afirst surface of the first reflective electrode has a first pattern tointroduce the first phase shift corresponding to the first wavelengthand a second surface of the second reflective electrode has a secondpattern to introduce the second phase shift corresponding to the secondwavelength. The first pattern and the second pattern may be configuredas a plurality of apertures. In an exemplary embodiment of the lightemitting layer structure, the first pattern has a first size, a firstseparation, and a first depth corresponding to the first phase shift. Inan exemplary embodiment of the light emitting layer structure, thesecond pattern has a second size, a second separation, and a seconddepth corresponding to the second phase shift.

In an exemplary embodiment of the light-emitting layer structure, thelight-emitting layer structure includes a substrate; a first sub-pixelincluding a first sub-pixel electrode layer deposited on the substrate;a first charge transport layer deposited on the first electrode layer; afirst emissive layer (EML) deposited on the first charge transport layerconfigured to emit light having a first wavelength; a second chargetransport layer deposited on the first EML; and a second electrode layerdeposited on the second charge transport layer; wherein at least one ofthe first sub-pixel electrode layer is configured to introduce a phaseshift, depending on the first wavelength, on reflection of light emittedby the first EML; and a second sub-pixel including a second sub-pixelelectrode layer deposited on the substrate; a third charge transportlayer deposited on the second sub-pixel electrode layer; a second EMLdeposited on the first charge transport layer configured to emit lighthaving a second wavelength; a fourth charge transport layer deposited onthe second EML; and a second electrode layer deposited on the fourthcharge transport layer; wherein the second sub-pixel electrode layer isconfigured to introduce a second phase shift, depending on the secondwavelength, on reflection of light emitted by the second EML, and thefirst phase shift is different from the second phase shift.

In an exemplary embodiment of the light-emitting layer structure, thefirst phase shift is configured to cause light having the firstwavelength to propagate in the first sub-pixel at a first mode and thesecond phase shift is configured to cause light having the secondwavelength to propagate in the second sub-pixel at a second mode.

In an exemplary embodiment of the light-emitting layer structure, thefirst sub-pixel electrode layer includes a first material forintroducing the first phase shift and the second sub-pixel layercomprises a second material for introducing the second phase shift.

In an exemplary embodiment of the light-emitting layer structure, thefirst sub-pixel electrode layer comprises a first plurality of layersand the second sub-pixel layer comprises a second plurality of layers.

In an exemplary embodiment the light-emitting layer structure includes afirst surface having a first pattern is disposed between the firstsub-pixel electrode layer and the first charge transport layer tointroduce the first phase shift corresponding to the first wavelength.In an exemplary embodiment of the light-emitting layer structure, asecond surface having a second pattern is disposed between the secondsub-pixel electrode layer and the third charge transport layer tointroduce the second phase shift corresponding to the second wavelength.

In an exemplary embodiment the light-emitting layer structure includes athird sub-pixel including a third sub-pixel electrode layer deposited onthe substrate; the first charge transport layer deposited on the thirdsub-pixel electrode layer; a third EML deposited on the first chargetransport layer configured to emit light associated with a thirdwavelength; the second charge transport layer deposited on the thirdEML; and the second electrode layer deposited on the second chargetransport layer; wherein the third sub-pixel electrode layer isconfigured to introduce a third phase shift, depending on the thirdwavelength, on reflection of light emitted by the third EML; wherein thefirst, second, and third sub-pixels correspond to red, green, and bluesub-pixels.

In an exemplary embodiment of the light-emitting layer structure, thethird phase shift is configured to cause light having the thirdwavelength to propagate at a first mode.

In an exemplary embodiment of the light-emitting layer structure, thethird sub-pixel electrode layer comprises a third material forintroducing the third phase shift.

In an exemplary embodiment of the light-emitting layer structure, atleast one of the emissive layers includes quantum dots for lightemission.

Although the invention has been shown and described with respect to acertain embodiment or embodiments, it is obvious that equivalentalterations and modifications will occur to others skilled in the artupon the reading and understanding of this specification and the annexeddrawings. In particular regard to the various functions performed by theabove described elements (components, assemblies, devices, compositions,etc.), the terms (including a reference to a “means”) used to describesuch elements are intended to correspond, unless otherwise indicated, toany element which performs the specified function of the describedelement (i.e., that is functionally equivalent), even though notstructurally equivalent to the disclosed structure which performs thefunction in the herein illustrated exemplary embodiment or embodimentsof the invention. In addition, while a particular feature of theinvention may have been described above with respect to only one or moreof several illustrated embodiments, such feature may be combined withone or more other features of the other embodiments, as may be desiredand advantageous for any given or particular application.

INDUSTRIAL APPLICABILITY

The present invention relates to a layer structure used for lightemitting devices, in particular, for QLED displays. Hardwaremanufactured using this disclosure may be useful in a variety of fieldsthat use QLED displays including gaming, entertainment, task support,medical, industrial design, navigation, transport, translation,education, and training.

REFERENCE SIGNS LIST

-   1—light-   2—top electrode-   3—xyz-coordinate system-   4—substrate-   6—bottom electrode-   8—hole transport layer (HTL)-   8 a—first HTL sub-layer-   8 b—second HTL sub-layer-   10—top emitting (TE) light-emitting device structure-   12—emissive layer (EML)-   12R—red sub-pixel EML-   12G—green sub-pixel EML-   12B—blue sub-pixel EML-   14—electron transport layer (ETL)-   16—layer thickness-   20—bottom emitting (BE) light-emitting device structure-   22—bottom electrode-   24—transparent substrate-   26—HTL-   28—emissive layer (EML)-   30—ETL-   32—top electrode-   33—top-emission display pixel-   34R—red sub-pixel-   34G—green sub-pixel-   34B—blue sub-pixel-   35—optical cavity-   40R—red electrical field distribution-   40G—green electrical field distribution-   40B—blue electrical field distribution-   41G—green reflection-   41R—red reflection-   41B—blue reflection-   53B—blue first trace-   53R—red first trace-   53G—green first trace-   54B—blue second trace-   54R—red second trace-   54G—green second trace-   55B—blue peak shift-   55G—green peak shift-   55R—red peak shift-   56B—blue first peak extraction efficiency-   56G—green first peak extraction efficiency-   56R—red first peak extraction efficiency-   57B—blue second peak extraction efficiency-   57G—green second peak extraction efficiency-   57R—red second peak extraction efficiency-   60R—top-emitting red sub-pixel-   61—bottom electrode-   61R—red sub-pixel-   61G—green sub-pixel-   61B—blue sub-pixel-   62—bottom electrode-   62B—blue multilayer bottom electrode-   62G—green multilayer bottom electrode-   62R—red multilayer bottom electrode-   63B—base layer-   63G—base layer-   63R—base layer-   64—first top layer-   64B—first top layer-   64G—first top layer-   64R—first top layer-   65—second top layer-   65B—second top layer-   65G—second top layer-   65R—second top layer-   70B—top-emitting blue sub-pixel-   70G—top-emitting green sub-pixel-   70R—top-emitting red sub-pixel-   72B—blue thin-layer bottom electrode-   72G—green thin-layer bottom electrode-   72R—red thin-layer bottom electrode-   74—base electrode layer-   76—layer-   76R—first thin layer-   76G—second thin layer-   76B—third thin layer-   78—metal boundary-   80R—top-emitting red sub-pixel-   80G—top-emitting green sub-pixel-   80B—top-emitting blue sub-pixel-   82—patterned bottom electrode-   82R—red patterned bottom electrode-   82G—green patterned bottom electrode-   82B—blue patterned bottom electrode-   84—additional metal layer-   86—apertures-   87—length dimension-   88—separation distance-   90—bottom reflector-   92—HTL-   94—EML,-   96—ETL-   98—top electrode-   100—mode maximum-   102—emission height-   104B—blue sub-pixel-   104G—green sub-pixel-   104R—red sub-pixel-   106R—red EML-   106G—green EML-   106B—blue EML-   108R—red HTL-   108G—green HTL-   108B—blue HTL-   110R—red maximum misalignment-   110G—green maximum misalignment-   1106—blue maximum misalignment-   112R—second reflector-   114—phase shift

What is claimed is:
 1. A light-emitting layer structure comprising: afirst optical cavity comprising: a first reflective electrode; a firstpartially transparent electrode; and a first emissive layer (EML)disposed between the first reflective electrode and the first partiallytransparent electrode, wherein the first EML is configured to emit lighthaving a first wavelength; wherein the first reflective electrode isconfigured to introduce a first phase shift, depending on the firstwavelength, on reflection of light emitted by the first EML; and asecond optical cavity comprising: a second reflective electrode; asecond partially transparent electrode; and a second EML disposedbetween the second reflective electrode and the second partiallytransparent electrode, wherein the second EML is configured to emitlight having a second wavelength; wherein the second reflectiveelectrode is configured to introduce a second phase shift, depending onthe second wavelength, on reflection of light emitted by the second EML,and the first phase shift is different from the second phase shift;where each of the first reflecting electrode and the second reflectingelectrode comprises a base layer and at least one emitting side layerlocated on an emitting side of the base layer, wherein the at least oneemitting side layer has a thickness less than a thickness of the baselayer; wherein the at least one emitting side layer comprises a firstemitting side layer and a second emitting side layer located on anemitting side of the first emitting side layer, wherein a combinedthickness of the first emitting side layer and the second emitting sidelayer is less than the thickness of the base layer.
 2. Thelight-emitting layer structure of claim 1, wherein the at least oneemitting side layer has a thickness from 0.5 nm to 12 nm.
 3. Thelight-emitting layer structure of claim 1, wherein the at least oneemitting side layer has a real component of refractive index that ishigher than a real component of refractive index of the base layer. 4.The light-emitting layer structure of claim 1, wherein the at least oneemitting side layer includes aluminum and the base layer includessilver.
 5. The light emitting-layer structure of claim 1, wherein thecombined thickness of the first emitting side layer and the secondemitting side layer is from 0.5 nm to 12 nm.
 6. The light emitting-layerstructure of claim 1, wherein the second emitting side layer has a realcomponent of refractive index that is higher than a real component ofrefractive index of the first emitting side layer, and the firstemitting side layer has a real component of refractive index that ishigher than a real component of refractive index of the base layer. 7.The light-emitting layer structure of claim 1, wherein the base layerhas a thickness of 80-100 nm.
 8. The light-emitting layer structure ofclaim 1, wherein the first phase shift is configured to cause lighthaving the first wavelength to propagate in the first optical cavity ata first mode and the second phase shift is configured to cause lighthaving the second wavelength to propagate in the second optical cavityat a second mode.
 9. The light-emitting layer structure of claim 1,wherein the first reflective electrode includes a first material forintroducing the first phase shift and the second reflective electrodeincludes a second material for introducing the second phase shift. 10.The light-emitting layer structure of claim 1, wherein the firstemissive layer and/or the second emissive layer includes quantum dotsfor light emission.